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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 250 200 7 6 1.5 UNIT V V V A A W ae ae Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2768 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=100|I IE=100|I A ; IE=0 A ; IC=0 250 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.8A 1.2 V ICBO Collector cut-off current VCB=250V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain Switching times Fall time IC=1A ; VCE=5V ton tstg CHA IN Turn-on time Storage time E SEM NG OND IC TOR UC 20 1.0 2.0 100 |I A |I s IC=4A; IB1=-IB2=-0.4A RL=20| |I s tf 1.0 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2768 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2768 CHA IN E SEM NG OND IC TOR UC 4 |
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